材料科学
单层
表面改性
堆积
纳米技术
拉曼光谱
异质结
光致发光
图层(电子)
扫描隧道显微镜
蓝宝石
薄膜
X射线光电子能谱
光电子学
扫描电子显微镜
化学工程
复合材料
光学
化学
物理
工程类
有机化学
激光器
作者
Justin Young,Michael Chilcote,Matthew R. Barone,Junguo Xu,Jyoti Katoch,Yunqiu Kelly Luo,Sara Mueller,Thaddeus J. Asel,Susan K. Fullerton‐Shirey,Roland Kawakami,Jay Gupta,L. J. Brillson,Ezekiel Johnston‐Halperin
摘要
Over the past decade, it has become apparent that the extreme sensitivity of 2D crystals to surface interactions presents a unique opportunity to tune material properties through surface functionalization and the mechanical assembly of 2D heterostructures. However, this opportunity carries with it a concurrent challenge: an enhanced sensitivity to surface contamination introduced by standard patterning techniques that is exacerbated by the difficulty in cleaning these atomically thin materials. Here, we report a templated MoS2 growth technique wherein Mo is deposited onto atomically stepped sapphire substrates through a SiN stencil with feature sizes down to 100 nm and subsequently sulfurized at high temperature. These films have a quality comparable to the best MoS2 prepared by other methodologies, and the thickness of the resulting MoS2 patterns can be tuned layer-by-layer by controlling the initial Mo deposition. The quality and thickness of the films are confirmed by scanning electron, scanning tunneling, and atomic force microscopies; Raman, photoluminescence, and x-ray photoelectron spectroscopies; and electron transport measurements. This approach critically enables the creation of patterned, single-layer MoS2 films with pristine surfaces suitable for subsequent modification via functionalization and mechanical stacking. Further, we anticipate that this growth technique should be broadly applicable within the family of transition metal dichalcogenides.
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