铌酸锂
兴奋剂
光子学
材料科学
光电子学
激光器
纳米光子学
光学
计算机科学
纳米技术
物理
作者
Yuechen Jia,Jiangwei Wu,Xiaoli Sun,Xiongshuo Yan,Ranran Xie,Lei Wang,Yuping Chen,Feng Chen
标识
DOI:10.1002/lpor.202200059
摘要
Abstract Rare‐earth (RE) ion doped crystalline materials have a wide spectrum of applications in lasers, amplifiers, sensors, as well as classical and quantum information processing. The incorporation of RE ions into integrated photonics holds great promise for enriching the designer's toolbox with a view to addressing key performance features not available in existing photonic integration platforms. RE‐ion‐doped thin‐film LiNbO 3 (also called RE‐ion‐doped lithium‐niobate‐on‐insulator, RE:LNOI), which inherits nearly all the material advantages as well as nanophotonic integration from the LNOI technology, meets the urgent demands for chip‐integrated laser sources, optical amplifiers, and quantum memories based on LNOI photonics. In this article, a timely review is provided on the development of RE:LNOI photonics in terms of ion‐doping techniques, chip‐integrated lasers, and amplifiers, as well as low‐temperature optical characterizations for quantum photonics. To conclude, some well‐noted topics that may shape the future directions in lithium–niobate integrated photonics are discussed.
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