Optimization of fin-slanted angles for enhanced electrical performance in lateral β-Ga2O3 MOSFETs

In this work, the influence of fin-slanted angles (α) on the electrical performance of lateral β-Ga2O3 MOSFETs was investigated through a combination of experiments and Sentaurus TCAD simulations. The fin-slanted devices demonstrated enhancement-mode characteristics with an on/off ratio of around 107. The increment in α resulted in improved drain-to-source current (IDS) and extrinsic transconductance (Gm). The voltage-blocking performance also showed significant enhancement with increasing α due to the mitigation of edge crowding, achieving a 40% increase in the breakdown voltage (VBR) for devices with an α of 15° and gate-to-drain length (LGD) of 10 μm. A detailed simulation analysis of the electric field distribution within the fin at the gate electrode edge identified an optimal α of approximately 25°, which effectively mitigates electric field crowding and has the potential to enhance the DC performance of the MOSFETs. These findings highlight the critical role of fin-slanted angle optimization in advancing the performance of lateral β-Ga2O3 MOSFETs, positioning them as promising candidates for next-generation power electronics.