Influence of temperature and surface recombination velocity on the performance of c-Si solar cell

In this paper, the influence of temperature and surface recombination velocity on the performance of c-Si solar cell is investigated using PC1D. Simulations are carried out for a reference c-Silicon solar cell. The results are shown by varying temperature, front surface recombination velocity and rear surface recombination velocity of the cell. It is observed that the efficiency of the cell decreases with increase in temperature, front surface recombination velocity and rear surface recombination velocity. Front surface and rear surface recombination velocities can be optimized for the desired efficiency at given temperature using PC1D simulations.