光催化
光降解
纳米复合材料
材料科学
罗丹明B
带隙
石墨氮化碳
半导体
可见光谱
异质结
化学工程
纳米技术
光化学
光电子学
催化作用
化学
有机化学
工程类
作者
Fatemeh Yousefzadeh,Qahtan A. Yousif,Mojgan Ghanbari,Masoud Salavati‐Niasari
标识
DOI:10.1016/j.molliq.2021.118443
摘要
The use of sufficient solar irradiation for the semiconductor photodegradation of organic pollutants is an excellent technique to tackle worldwide water contamination. Photocatalysis is an eco-friendly method that is familiar for the breakdown of toxic pollutants in sewage. Many semiconductor heterojunctions have been widely employed to intensify photocatalytic efficiency compared to single semiconductors. Polymeric semiconductors such as graphitic carbon nitride (g-C3N4) have been considered inspirational applicants due to their easily adjustable electronic structure and adaptable optical absorption properties. Disadvantages of the current photocatalytic method, which limit their uses, include the rapid recombination, low emigration ability of the photo-generated electron-hole, and low use of visible radiation. The current study designates the preparation of novel TlSnI3/g-C3N4 nanocomposites by ultrasound-assisted coprecipitation technique. The bandgap was estimated at 2.7 eV for pristine g-C3N4. The bandgap of nanocomposite was decreased to 2.5 eV by enhancing TlSnI3 content due to the narrow bandgap of TlSnI3 (2.3 eV). This nanocomposite possesses a high ability to decompose organic dyes due to its relevant bandgap being a prominent catalyst for water treatment. The photocatalytic ability of TlSnI3/C3N4 was examined over the removal of Methylene Blue (MB), Malachite Green (MG), and Rhodamine B (RhB) under visible light. The as-synthesized TlSnI3/C3N4 nanocomposites exposed better photocatalytic performance than the pure TlSnI3 and C3N4.
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