材料科学
光电子学
格子(音乐)
吸收(声学)
砷化镓
物理
复合材料
声学
作者
I. Shafir,D.C. Elias,D. Memram,Noam Sicron,M. Katz
标识
DOI:10.1016/j.infrared.2022.104217
摘要
In this paper we report the design, fabrication and characterization of an innovative T2SL/InP/T2SL pBp structure based on an InGaAs/GaAsSb superlattice absorption layer lattice matched to an InP substrate. The device exhibits a cutoff wavelength of 2.3 µm at room temperature and 2.2 µm at 200 K. At 200 K, a dark current density of 1.3x10 -6 A/cm 2 under 0.1 V bias operation was measured. At room temperature, a quantum efficiency up to 37% and a specific detectivity of 1x10 10 cmHz 1/2 /W were achieved at 2.2 µm. The overall performance of these pBp detectors demonstrates their potential as extended short wavelength infrared detectors.
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