碲化镉光电
扩散
示踪剂
铟
自扩散
晶体缺陷
化学
兴奋剂
材料科学
化学物理
结晶学
热力学
纳米技术
物理
业务
营销
有机化学
核物理学
光电子学
自助服务
作者
Shyh-Shi Chern,F. A. Kröger
标识
DOI:10.1016/0022-4596(75)90360-6
摘要
Cadmium and Te tracer self-diffusion was studied for pure and indium-doped CdTe. Analysis of the results leads to a point defect model in which imperfections with various charges play a role. Expressions for the tracer diffusion coefficients by various mechanisms and for the diffusion coefficients of individual point defects are derived.
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