振荡(细胞信号)
电感
门驱动器
寄生元件
电压
噪音(视频)
材料科学
MOSFET
电气工程
光电子学
物理
电子工程
计算机科学
工程类
晶体管
化学
人工智能
图像(数学)
生物化学
作者
Yusuke Sugihara,Kimihiro Nanamori,Masaaki Yamamoto,Yasuki Kanazawa
出处
期刊:2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia)
日期:2018-05-01
被引量:6
标识
DOI:10.23919/ipec.2018.8507433
摘要
Fast switching power semiconductor devices such as SiC MOSFET and GaN FET have attracting increasing attention because of superior switching capability which contributes to high efficiency and high power density of power converters. However, fast switching capability generates large switching noise. Particularly, parasitic oscillation observed in the gate voltage is a severe problem due to the gate-source breakdown. This paper hypothesized that the gate resonator selectively takes in parasitic oscillation caused by a power circuit because of its frequency characteristic and analyzed the gate voltage oscillation. As a result, the phenomenon is characterized by an oscillation susceptibility which indicates susceptibility of the gate voltage to a drain voltage oscillation. Moreover, the oscillation susceptibility predicts the parasitic inductance dependency of the gate voltage oscillation. Therefore, the parasitic inductance should be designed to suppress this oscillation considering the oscillation susceptibility. Results obtained by simulation and experiment indicated appropriateness of analysis results.
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