Passive Q-switching laser properties of Yb:Re3Ga5O12 (Re = Y, Lu, Gd) garnets with GaAs semiconductor saturable absorber

We report, for the first time to our knowledge, on the GaAs saturable absorber passive Q-switching laser properties of Yb:Y3Ga5O12, Yb:Lu3Ga5O12, and Yb:Gd3Ga5O12 gallium garnet crystals. 1.10–1.53 W of average output power at 1025–1026 nm could be generated at pulse repetition rates ranging from 19.6 to 43.5 kHz. The shortest pulse duration achieved with the three garnets proved to be very close, falling in a range of 3.3–3.5 ns. The largest pulse energy and highest peak power, obtained with Yb:Y3Ga5O12; Yb:Lu3Ga5O12; and Yb:Gd3Ga5O12, were respectively, 52.0; 82.4; and 55.0 μJ, and 12.4, 17.0, and 12.7 kW.