响应度
材料科学
光电流
光电探测器
光电子学
紫外线
电极
石墨烯
光电导性
异质结
光探测
暗电流
偏压
纳米技术
物理
量子力学
作者
Jian Gao,Yehao Li,Yuxuan Hu,Zhitong Wang,Anqi Hu,Xia Guo
出处
期刊:Chinese Physics B
[IOP Publishing]
日期:2020-12-01
卷期号:29 (12): 128502-128502
被引量:4
标识
DOI:10.1088/1674-1056/abb3eb
摘要
A graphene/AlGaN deep-ultraviolet (UV) photodetector is presented with ultrahigh responsivity of 3.4 × 10 5 A/W at 261 nm incident wavelength and 149 pW light power. A gain mechanism based on electron trapping at the potential well is proposed to be responsible for the high responsivity. To optimize the trade-off between responsivity and response speed, a back-gate electrode is designed at the AlGaN/GaN two-dimensional electron gas (2DEG) area which eliminates the persistent photocurrent effect and shortens the recovery time from several hours to milliseconds. The 2DEG gate is proposed as an alternative way to apply the back gate electrode on AlGaN based devices on insulating substrates. This work sheds light on a possible way for weak deep-UV light detection.
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