Photoelectric characteristics of mid-infrared nBn photodetector based on InAs/InAsSb superlattice

The InAs/InAsSb nBn structure detector without Ga (GA-free) has fewer internal defects, and the barrier blocks majority carrier while allowing the normal transport of photogenerated carriers. The unique structure can effectively suppress the generation-composite current generated by SRH, and achieve low dark current at high operating temperature. In this paper, a mid-infrared Ga-free nBn T2SL detector is investigated. The device exhibited 7.43x10^-6 A/cm² under 0.5 V bias at 127 K. At 120K, the detector achieves quantum efficiency values of 56%, exhibits excellent photoelectric performance.