High‐Temperature Semiconductor CuO/SiC‐Based Catalyst for Artificial Photosynthesis

Abstract Artificial photosynthesis can convert CO 2 and H 2 O into hydrocarbons via solar energy. However, the extremely low process efficiency is a major obstacle to this application. The photocatalyst is considered to be the key factor to raise the overall solar energy conversion efficiency. Much research focused on co‐catalysts, but less attention has been paid on the high‐temperature semiconductor. Herein, a strategy is proposed involving high‐temperature semiconductor to design target photocatalyst dealing with the artificial photosynthesis at high temperature. Based upon this strategy, a CuO/SiC catalyst with single atom characteristic was designed, prepared and the activity of CO 2 photoreduction with H 2 O was tested in a high temperature environment. Above 150 °C, the catalyst activity was boosted and unprecedented performance values were attained. Under the irradiation condition delivered by a 1000 W Xe light and at 350 °C, the obtained yields of CH 4 , C 2 H 4 , and C 2 H 6 were 2041.4 μmol ⋅ g −1 , 15.2 μmol ⋅ g −1 , and 63.6 μmol ⋅ g −1 , respectively. The overall CO 2 conversion reached 24.6 % and the maximum solar energy conversion efficiency was 2.3 % without any sacrificed agents. This strategy will be helpful to overcome the current limitations for the industrialization of artificial photosynthesis and accelerate the related research on photothermal catalysis.