A hybrid memristor with oxide-polymer heterojunction

A hybrid memristor based on the bilayer structure of indium gallium zinc oxide (IGZO)/polyvinyl alcohol (PVA) is developed, which demonstrates device state updates in an analog manner with high reliability. The IGZO/PVA heterojunction is crucial for the realization of the memristive characteristics, presumably associated with oxygen ion redistribution across the IGZO/PVA interface. The hybrid memristor may act as an electronic synapse, being capable of emulating synaptic potentiation with good linearity, synaptic depression, and paired-pulse facilitation. It highlights potential applications of the oxide-polymer heterojunction in the exploration of neuromorphic devices.