Interface Engineering of 2D Materials toward High‐Temperature Electronic Devices

Abstract High‐temperature electronic materials and devices are highly sought after for advanced applications in aerospace, high‐speed automobiles, and deep‐well drilling, where active or passive cooling mechanisms are either insufficient or impractical. 2D materials (2DMs) represent promising alternatives to traditional silicon and wide‐bandgap semiconductors (WBG) for nanoscale electronic devices operating under high‐temperature conditions. The development of robust interfaces is essential for ensuring that 2DMs and their devices achieve high performance and maintain stability when subjected to elevated temperatures. This review summarizes recent advancements in the interface engineering of 2DMs for high‐temperature electronic devices. Initially, the limitations of conventional silicon‐based materials and WBG semiconductors, alongside the advantages offered by 2DMs, are examined. Subsequently, strategies for interface engineering to enhance the stability of 2DMs and the performance of their devices are detailed. Furthermore, various interface‐engineered 2D high‐temperature devices, including transistors, optoelectronic devices, sensors, memristors, and neuromorphic devices, are reviewed. Finally, a forward‐looking perspective on future 2D high‐temperature electronics is presented. This review offers valuable insights into emerging 2DMs and their applications in high‐temperature environments from both fundamental and practical perspectives.