太赫兹辐射
照相混合
光电子学
激光器
远红外激光器
材料科学
太赫兹光谱与技术
量子级联激光器
太赫兹间隙
级联
光学
太赫兹时域光谱学
量子阱
光学整流
半导体激光器理论
半导体
物理
非线性光学
太赫兹超材料
色谱法
化学
作者
Kazuue Fujita,Shohei Hayashi,Akio Ito,Masahiro Hitaka,Tatsuo Dougakiuchi
出处
期刊:Nanophotonics
[De Gruyter]
日期:2019-11-02
卷期号:8 (12): 2235-2241
被引量:54
标识
DOI:10.1515/nanoph-2019-0238
摘要
Abstract Terahertz quantum cascade laser sources with intra-cavity non-linear frequency mixing are the first room-temperature electrically pumped monolithic semiconductor sources that operate in the 1.2–5.9 THz spectral range. However, high performance in low-frequency range is difficult because converted terahertz waves suffer from significantly high absorption in waveguides. Here, we report a sub-terahertz electrically pumped monolithic semiconductor laser. This sub-terahertz source is based on a high-performance, long-wavelength (λ ≈ 13.7 μm) quantum cascade laser in which high-efficiency terahertz generation occurs. The device produces peak output power of 11 μW within the 615–788 GHz frequency range at room temperature. Additionally, a source emitting at 1.5 THz provides peak output power of 287 μW at 110 K. The generated terahertz radiation of <2 THz is mostly attributable to the optical rectification process in long-wavelength infrared quantum cascade lasers.
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