Experimental Design and Research of Mo Electrode Prepared by Magnetron Sputtering

The Mo electrode on the silicon wafers were prepared by pulsed DC reactive magnetron sputtering. The effects of a single variable such as vacuum and gas flow on properties of Mo electrode were investigated, design rules combined with correlation experiment were explored to find out the key factors that affect the performance of the electrode. The preparation process of Mo electrode was optimized and the properties of Mo electrode film were characterized. The results show that the process is simple and intuitive, high efficiency. It enables students to have an intuitive experience in design and control of the process, and meets the needs of experimental courses in Microelectronics and Instrument Science and Technology, while the experimental results can be directly applied in microelectromechanical systems (MEMS) piezoelectric devices, large area integrated circuits, soft X-ray reflection elements and so on.