电压
工程物理
晶体管
场效应晶体管
电气工程
电容
阈值电压
材料科学
电容器
阈下传导
计算机科学
纳米技术
光电子学
工程类
物理
电极
量子力学
作者
Xiaobin Ren,Zhengjun Lu,Xiujuan Zhang,Souren Grigorian,Wei Deng,Jiansheng Jie
出处
期刊:ACS materials letters
[American Chemical Society]
日期:2022-07-20
卷期号:4 (8): 1531-1546
被引量:26
标识
DOI:10.1021/acsmaterialslett.2c00440
摘要
The quest for organic field-effect transistors (OFETs) with low operating voltage has become highly compelling in many application areas, such as medical sensors, radio frequency identification (RFID), wearable and stretchable technologies, etc. To this end, considerable efforts have been devoted to decreasing the operation voltage of OFETs while retaining high performance over the last few decades. This Review focuses on the recent progress in the field of low-voltage OFETs. The critical factors to realize low-voltage OFETs are analyzed systematically through establishing the relationships between the operation voltage and subthreshold swing. Further on the strategic approaches for lowering the operation voltage, increasing gate dielectric capacitance, reducing the trap density within the semiconductor layer or at device interfaces, and using the negative capacitor effect, are summarized and discussed. We conclude with an overview of these critical methods and the key challenges to enable the laboratory-to-production transition.
科研通智能强力驱动
Strongly Powered by AbleSci AI