Resistance fluctuation spectroscopy of phase transitions in (La0.2Pr0.2Nd0.2Sm0.2Eu0.2)NiO3 thin films

The study of phase transitions is crucial to understanding the physics of materials and utilizing them for technological applications. This article presents a detailed analysis of the electronic transport properties of high entropy oxide thin films. We observe an increase in resistance fluctuations across a first-order phase transition. We show that the noise arises from an electronic phase separation accompanying the spin ordering due to the formation of domains of localized and delocalized charges. We conclude that due to charge disproportionation, the charge carriers form domains of localized and delocalized electrons in this system. Our study establishes the existence of multiple states with near equal energy in such complex oxide thin films.