光子学
铌酸锂
光电子学
材料科学
激光器
波导管
光子集成电路
堆栈(抽象数据类型)
薄脆饼
集成电路
光电探测器
半导体激光器理论
晶片键合
半导体
光学
计算机科学
物理
程序设计语言
作者
Xian Zhang,Xiaoyue Liu,Lin Liu,Yibo Han,Heyun Tan,Liu Liu,Zhongjin Lin,Siyuan Yu,Ruijun Wang,Xinlun Cai
摘要
Thin-film lithium niobate (TFLN) photonic integrated circuits (PICs) have emerged as a promising integrated photonics platform for the optical communication, microwave photonics, and sensing applications. In recent years, rapid progress has been made on the development of low-loss TFLN waveguides, high-speed modulators, and various passive components. However, the integration of laser sources on the TFLN photonics platform is still one of the main hurdles in the path toward fully integrated TFLN PICs. Here, we present the heterogeneous integration of InP-based semiconductor lasers on a TFLN PIC. The III–V epitaxial layer stack is adhesively bonded to a TFLN waveguide circuit. In the laser device, the light is coupled from the III–V gain section to the TFLN waveguide via a multi-section spot size converter. A waveguide-coupled output power above 1 mW is achieved for the device operating at room temperature. This heterogeneous integration approach can also be used to realize on-chip photodetectors based on the same epitaxial layer stack and the same process flow, thereby enabling large-volume, low-cost manufacturing of fully integrated III–V-on-lithium niobate systems for next-generation high-capacity communication applications.
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