原子层沉积
铪
X射线光电子能谱
材料科学
图层(电子)
硅
沉积(地质)
分析化学(期刊)
薄膜
硅酸盐
光电子学
化学工程
纳米技术
锆
化学
冶金
色谱法
工程类
古生物学
生物
沉积物
作者
Lawrence Bartholomew,Andy Bavin,Thierry Lazerand,Vivek Rao,Matthew Weldon,Li Wang
出处
期刊:ECS transactions
[The Electrochemical Society]
日期:2009-03-06
卷期号:18 (1): 567-574
被引量:1
摘要
A novel Atomic Layer Deposition (ALD) process has been developed in which chemical precursors are co-injected and simultaneously reacted. The process demonstrates hafnium silicate films of uniform composition that can be easily tuned from <30 to >80 % Hf concentration to meet specific device requirements with excellent thickness control proportional to the number of process cycles. The film has been fully integrated into a CMOS structure and provides repeatable parametric results over a wide range of film compositions. In addition we review a VUV metrology technique correlated to X-ray photoelectron spectroscopy that enables measurement of the hafnium vs. silicon composition in very thin films <50 Aå, with sensitivity to lower hafnium concentration in the interfacial layer for films deposited directly upon silicon substrates.
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