化学
结晶学
电子结构
铟
开壳
电子
化学物理
星团(航天器)
密度泛函理论
金属
作者
Dong Kyun Seo,John D. Corbett
摘要
The new title compound has been synthesized and characterized by physical property measurements and electronic structure calculations. The results ratify the highly uncommon deficiency of one electron that has been long speculated for its Ca3Ga5-type structure on the basis of the simple Zintl electron counting formalism. In the Sr3In5 structure (Cmcm), 4- and 2-bonded indium atoms in a 4:1 ratio form a three-dimensional classical network that encapsulates strontium atoms in its narrow channels. The electrical conductivity of the compound shows typical metallic behavior. The detailed electronic structure analysis suggests that the electron hole is mainly localized on a nonbonding p-orbital on the 2-bonded indium atoms, and that these orbitals, stacked in a σ-type way along a (4.97 A), interact only weakly with each other to form highly one-dimensional bands.
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