30.2: Amorphous Silicon Thin‐Film Transistor Gate Driver Circuit Design with Time Division Driving Method for In‐Cell Touch Display Panel

In this paper, an integrated hydrogenated amorphous silicon (a‐Si:H) thin‐film transistor (TFT) gate driver circuit design with the time division driving method is demonstrated for in‐cell touch display panels. The design can avoid long‐term biasing of the pull‐up TFT in the conventional gate driver circuits and address the issues due to leakage current at Q node in the circuit during the touch sensing period. Therefore, the overall reliability of the circuit is improved. The design of the circuit is also simple without needing any additional signal inputs. As a result, the proposed circuit design can be used to pause display operation to perform touch sensing operation several times per frame, which can realize 60 Hz display scanning and 120 Hz touch reporting rate.