铁电性
材料科学
光电效应
极化(电化学)
带隙
薄膜
光电子学
纳米技术
电介质
化学
物理化学
作者
Xinrui Cheng,Guoqiang Xi,Yue‐Wen Fang,Jerry Ding,Jianjun Tian,Linxing Zhang
标识
DOI:10.1016/j.jeurceramsoc.2023.02.025
摘要
Ferroelectric thin films with switchable polarization and anomalous photoelectric effects have received extensive attention recently. However, the improvement of photoelectric performance is accompanied by the weakening of ferroelectricity. Here, both chemical and interlayer design are used to regulate the polarization and optical properties of BiFeO3-based ferroelectric films. We achieved an improvement in both ferroelectricity and bandgap by chemical composition. The remanent polarization has been enhanced to 73.8 μC/cm2 from 0.2 μC/cm2, ascribed to the structural transition. The band gap of Eu-BiFeO3 films has been reduced to 2.23 eV from 2.42 eV due to the unique energy level from Eu 4f, indicating the enhanced visible-light-absorbing capability. We have designed a "sandwich" interfacial structure of homogeneous Eu-BiFeO3 films. A clever combination between optimal ferroelectricity and narrow band gap with near Eu contents of BFO films would generate an interfacial layer with a homogeneous gradient component, which should favor the switching of ferroelectric domains. The results show that the remanent polarization improved by 17 % to 86.2 μC/cm2 while the band gap has also improved. Intriguingly, the short-circuit current density (Jsc) and open circuit (Voc) of the photovoltaic signal of the optimal films are 89.0 nA and 0.412 V, respectively. This provides a simple and intelligent way to design the ferroelectric-photoelectric thin films and lays the foundation for optical information storage devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI