光电探测器
光电子学
材料科学
太赫兹辐射
探测器
带隙
范德瓦尔斯力
紫外线
纳米技术
光学
物理
分子
量子力学
作者
Muhammad Abdullah,Muhammad Rizwan Younis,Muhammad Tahir Sohail,Shi‐Fang Wu,Xiong Zhang,Karim Khan,Muhammad Bilal Asif,Peiguang Yan
出处
期刊:Small
[Wiley]
日期:2024-09-05
被引量:10
标识
DOI:10.1002/smll.202402668
摘要
Abstract Photodetectors are one of the most critical components for future optoelectronic systems and it undergoes significant advancements to meet the growing demands of diverse applications spanning the spectrum from ultraviolet (UV) to terahertz (THz). 2D materials are very attractive for photodetector applications because of their distinct optical and electrical properties. The atomic‐thin structure, high carrier mobility, low van der Waals (vdWs) interaction between layers, relatively narrower bandgap engineered through engineering, and significant absorption coefficient significantly benefit the chip‐scale production and integration of 2D materials‐based photodetectors. The extremely sensitive detection at ambient temperature with ultra‐fast capabilities is made possible with the adaptability of 2D materials. Here, the recent progress of photodetectors based on 2D materials, covering the spectrum from UV to THz is reported. In this report, the interaction of light with 2D materials is first deliberated on in terms of optical physics. Then, various mechanisms on which detectors work, important performance parameters, important and fruitful fabrication methods, fundamental optical properties of 2D materials, various types of 2D materials‐based detectors, different strategies to improve performance, and important applications of photodetectors are discussed.
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