光电子学
离子
联轴节(管道)
材料科学
二极管
锂(药物)
拓扑(电路)
电容器
五氧化二铌
电气工程
电压
物理
铌
工程类
冶金
医学
量子力学
内分泌学
作者
Hongyun Ma,Kai Sun,Yu‐Dong Cai,Fengfeng Li,Lingxiao Ma,Yifeng Qi,Hongwei Sheng,Liang Wu,Kai Wang,Jun Wang,Yujun Fu,Yang Chai,Wei Lan
标识
DOI:10.1002/anie.202420404
摘要
Ion/electron‐coupling logic operation is recognized as the most promising approach to achieving in‐depth brain‐inspired computing, but the lack of high‐performance ion/electron‐coupling devices with high operating frequencies much restricts the fast development of this field. Accordingly, we herein report an orthorhombic niobium pentoxide (T‐Nb2O5) based lithium‐ion capacitor diode (CAPode) that possesses thoroughly improved performances to achieve multifrequency ion/electron‐coupling logic operations. Specifically, benefiting from the unique crystal structure and fast ion‐transport topology of T‐Nb2O5, the constructed CAPode exhibits a high response frequency of up to 122 Hz, over three orders of magnitude higher than those of the state‐of‐the‐art CAPodes. Meanwhile, the T‐Nb2O5 based CAPode delivers a record‐high rectification ratio of 108, a high specific capacity of 390 C g−1, a wide voltage window of −1.5~1.5 V, and a superior cycling stability over 2000 cycles. Combining these performance advantages, the T‐Nb2O5 based CAPode is demonstrated to be fully competent in typical AND and OR logic gates over a wide frequency range of 1~100 Hz, validating great potential in the burgeoning field of multifrequency ion/electron‐coupling logic operations.
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