材料科学
双极结晶体管
共发射极
撞击电离
光电子学
异质结
瞬态(计算机编程)
异质结双极晶体管
电离
晶体管
拐点
电压
电气工程
物理
计算机科学
离子
几何学
数学
量子力学
工程类
操作系统
作者
Xiaoyu Pan,Hao Guo,Feng Ye,Yinong Liu,Jinxin Zhang,Jun Fu,Guofang Yu
出处
期刊:Chinese Physics B
[IOP Publishing]
日期:2023-08-01
卷期号:32 (9): 098503-098503
被引量:1
标识
DOI:10.1088/1674-1056/acaa28
摘要
We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) can change with decreasing temperature from +20 °C to −180 °C. This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform. Firstly, when the temperature drops from +20 °C to −140 °C, the increased carrier mobility drives a slight increase in transient amplitude. However, as the temperature decreases further below −140 °C, the carrier freeze-out brings about an inflection point, which means the transient amplitude will decrease at cryogenic temperatures. To better understand this result, we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt’s new incomplete ionization model. The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional (2D) TCAD process simulation. In addition, we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions. The increase of the emitter–base junction’s barrier height at low temperatures could suppress this electron-injection phenomenon. We have also optimized the built-in voltage equations of a high current compact model (HICUM) by introducing the impact of incomplete ionization. The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures, and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments.
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