石墨烯
氮化硼
化学气相沉积
材料科学
宽禁带半导体
氮化物
硼
电子迁移率
纳米技术
光电子学
六方氮化硼
化学
图层(电子)
有机化学
作者
Will Gannett,William Regan,Kenji Watanabe,Takashi Taniguchi,Michael F. Crommie,Alex Zettl
摘要
Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as 37 000 cm2/V s, an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth technique but rather the choice of a substrate that minimizes carrier scattering.
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