Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control

Abstract Monolayer molybdenum disulfide (MoS 2 ), an emergent two-dimensional (2D) semiconductor, holds great promise for transcending the fundamental limits of silicon electronics and continue the downscaling of field-effect transistors. To realize its full potential and high-end applications, controlled synthesis of wafer-scale monolayer MoS 2 single crystals on general commercial substrates is highly desired yet challenging. Here, we demonstrate the successful epitaxial growth of 2-inch single-crystal MoS 2 monolayers on industry-compatible substrates of c -plane sapphire by engineering the formation of a specific interfacial reconstructed layer through the S/MoO 3 precursor ratio control. The unidirectional alignment and seamless stitching of MoS 2 domains across the entire wafer are demonstrated through cross-dimensional characterizations ranging from atomic- to centimeter-scale. The epitaxial monolayer MoS 2 single crystal shows good wafer-scale uniformity and state-of-the-art quality, as evidenced from the ~100% phonon circular dichroism, exciton valley polarization of ~70%, room-temperature mobility of ~140 cm 2 v −1 s −1 , and on/off ratio of ~10 9 . Our work provides a simple strategy to produce wafer-scale single-crystal 2D semiconductors on commercial insulator substrates, paving the way towards the further extension of Moore’s law and industrial applications of 2D electronic circuits.