石墨烯
材料科学
响应度
光电探测器
异质结
光电导性
范德瓦尔斯力
纳米技术
光电子学
量子力学
物理
分子
作者
Wei He,Dong Wu,Lingling Kong,Peng Yu,Guowei Yang
标识
DOI:10.1002/adma.202312541
摘要
Abstract The positive photoconductive (PPC) effect is a well‐established primary detection mechanism employed by photodetectors. In contrast, the negative photoconductive (NPC) effect is not extensively investigated thus far, and research on the NPC effect is still in its early stage. Herein, a quaternary van der Waals material, AgBiP 2 Se 6 atomic layers, is discovered to achieve a giant NPC effect. Through experimental observations in a Graphene/AgBiP 2 Se 6 / Graphene‐based vertical photodetector, an irreversible conversion is identified from common PPC photoresponse to atypical NPC photoresponse. Notably, this device demonstrates an exceptionally high negative responsivity (R) of 4.9 × 10 5 A W −1 , surpassing the previous records for NPC photodetectors. Additionally, it exhibits remarkable optoelectronic performances, including an external quantum efficiency of 1.3 × 10 8 % and a detectivity ( D ) of 3.60 × 10 12 Jones. The exceptionally high NPC photoresponse observed in this device can be attributed to the swift suppression of photogenerated free carriers at robust recombination centers situated at significant depths, induced by the elevated drain‐source voltage bias. The remarkably high NPC photoresponse also positions AgBiP 2 Se 6 as a promising 2D material for multifunctional optoelectronic devices and an excellent platform for systematic exploration of the NPC effect.
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