兴奋剂
二硫化钼
超导电性
材料科学
凝聚态物理
相变
钼
转变温度
载流子
电荷密度
过渡金属
化学物理
光电子学
化学
物理
催化作用
冶金
量子力学
生物化学
作者
Johan Biscaras,Zhesheng Chen,Andrea Paradisi,Abhay Shukla
摘要
Abstract Atomically thin films of layered materials such as molybdenum disulfide (MoS 2 ) are of growing interest for the study of phase transitions in two-dimensions through electrostatic doping. Electrostatic doping techniques giving access to high carrier densities are needed to achieve such phase transitions. Here we develop a method of electrostatic doping which allows us to reach a maximum n -doping density of 4 × 10 14 cm −2 in few-layer MoS 2 on glass substrates. With increasing carrier density we first induce an insulator to metal transition and subsequently an incomplete metal to superconductor transition in MoS 2 with critical temperature ≈10 K. Contrary to earlier reports, after the onset of superconductivity, the superconducting transition temperature does not depend on the carrier density. Our doping method and the results we obtain in MoS 2 for samples as thin as bilayers indicates the potential of this approach.
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