材料科学
响应度
光电探测器
纤锌矿晶体结构
薄膜
微晶
光电子学
兴奋剂
紫外线
带隙
半导体
宽禁带半导体
锌
纳米技术
冶金
作者
Basavaraj G. Hunashimarad,J. S. Bhat,P. V. Raghavendra,R. F. Bhajantri
标识
DOI:10.1016/j.optmat.2021.111960
摘要
Photoresponse of calcium doped zinc oxide (ZnO:Ca) metal-semiconductor-metal (MSM) UV detectors are reported. Photosensitive ZnO:Ca films exhibit high transparency in the visible region, show polycrystalline, hexagonal wurtzite structure, having c-axis preferred growth. Noticed redshift of 60 meV in the optical band gap for ZnO:Ca (3 wt%) thin film is attributed to increased crystallite size. Improved n-type conductivity in ZnO with Ca doping is due to increased carrier concentration, MSM photodetector fabricated with, 3 wt% Ca doped ZnO exhibit higher responsivity of 3.05A/W at 365 nm UV illumination. Transient response measurements show reasonably fast switching with a rise and fall time of 15s and 26s respectively. The obtained results suggest, ZnO:Ca can be used as active material in the fabrication of UV photodetectors.
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