dBc公司
相位噪声
放大器
CMOS芯片
电气工程
材料科学
功勋
压控振荡器
光电子学
偏压
Crystal(编程语言)
晶体振荡器
物理
电压
工程类
计算机科学
谐振器
程序设计语言
作者
Shunta Iguchi,Takayasu Sakurai,Makoto Takamiya
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2017-09-13
卷期号:52 (11): 3006-3017
被引量:33
标识
DOI:10.1109/jssc.2017.2743174
摘要
This paper presents a low-power 39.25-MHz crystal oscillator with a new stacked-amplifier architecture achieving the smallest figure of merit (FoM) ever reported for a crystal oscillator for wireless communications. Theoretical analyses of the power consumption and the phase noise (PN) in the proposed stacked-amplifier architecture are newly provided to clarify the reason why the proposed stacked-amplifier architecture achieves the smallest FoM. Additionally, a new self-forward-body-biasing technique and flicker noise suppression technique are shown to reduce the minimum operational supply voltage (VDD(MIN)) and the PN, respectively. The proposed 3.3-V, 39.25-MHz stackedamplifier crystal oscillator fabricated in a 65-nm CMOS process exhibits the smallest FoM for a crystal oscillator of -248 dBc/Hz with a power consumption of 19 μW and PN of -139 dBc/Hz at 1-kHz offset frequency. The relative frequency errors among 11 samples at temperatures of -30 °C to 80 °C and for ±10% supply voltage variation are ±10.5 ppm and ±0.12 ppm, respectively. The long-term frequency error is -0.98 ppm in the first year (=365 days).
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