Low-Leakage High-Breakdown Laterally Integrated HEMT-LED via n-GaN Electrode

We report lateral integration of an InGaN/GaN light-emitting diode (LED) and an AlGaN/GaN high electron mobility transistor (HEMT) via the epitaxial layers. Direct contact of the HEMT channel and the n-GaN electrode of the LED allows for conversion of a current-controlled LED to a voltage-controlled device by the gate and drain biases. The integrated HEMT-LED exhibited a light output power of 7 mW from the LED with a modulated injection current of 80 mA through the HEMT ( $V_{{\mathrm{DD}}} =8$ V and $V_{{\mathrm{GS}}}=1$ V). The off-state breakdown voltage for the integrated HEMT-LED was 530 and 270 V at forward and reverse bias condition, respectively. The superior characteristics are attributed to the common GaN/AlN buffer platform featured with high crystalline quality and large resistivity simultaneously.