A High‐Performance Self‐Powered UV‐Visible‐Infrared Broadband Photodetector Based on a Solution‐Processed Bi2Se3/Se Nanorods Heterojunction

Abstract Nanostructured semiconductor materials synthesized through solution processes have received a substantial body of attention owing to their cost‐effectiveness, manufacturing ease, and environmental friendliness. Here, a simple solution approach is used to synthesize Bi 2 Se 3 /Se nanorods (NRs) heterojunction by covering Se NRs with a uniform Bi 2 Se 3 shell. The morphology, composition, and structure of the samples are characterized and the growth mechanism is also analyzed. Furthermore, the photodetector based on the Bi 2 Se 3 /Se NRs is fabricated. The as‐prepared Bi 2 Se 3 /Se NRs photodetector exhibits an outstanding broadband photoresponse from UV (365 nm) to IR (850 nm) with good repeatability and self‐powered ability. Upon light illumination, Bi 2 Se 3 /Se NRs photodetector shows maximum photocurrent of 190 µA (UV light), 194 µA (blue light), 145 µA (green light), 38 µA (red light), 4 µA (IR light) as well as a rapid response time around 0.1 s approximately. Moreover, a possible detection mechanism of Bi 2 Se 3 /Se NRs photodetector is also discussed.