反键分子轨道
高价分子
化学键
化学物理
性格(数学)
无定形固体
材料科学
电子结构
从头算
密度泛函理论
相(物质)
结晶学
凝聚态物理
计算化学
化学
原子轨道
物理
量子力学
电子
几何学
数学
有机化学
冶金
碘
作者
Felix C. Mocanu,Konstantinos Konstantinou,Juraj Mavračić,Stephen R. Elliott
标识
DOI:10.1002/pssr.202000485
摘要
An analysis of the electronic structure and chemical bonding in glassy Sb 2 Te 3 is carried out by means of density functional theory calculations, on a computer model generated by ab initio molecular dynamics. A significant antibonding character of electronic states below the Fermi level is observed, which is the characteristic feature of phase‐change memory materials. Near‐linear chains, with alternating long and short bonds, are found to be an important geometric structural pattern related to this antibonding signature. The electronic structure and chemical bonding analysis, herein, reveals an emergent character of hypervalent interactions in the amorphous phase of Sb 2 Te 3 . The intimate link between these near‐linear chains, hypervalent interactions, and the fast‐switching properties of this technologically important material provides valuable information for the future development of phase‐change memory materials.
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