材料科学
神经形态工程学
记忆电阻器
小型化
纳米技术
光电子学
计算机科学
突触重量
人工神经网络
兴奋剂
电子工程
人工智能
工程类
作者
Kaiyang Wang,Jingsheng Chen,Xiaobing Yan
出处
期刊:Nano Energy
[Elsevier BV]
日期:2020-10-06
卷期号:79: 105453-105453
被引量:80
标识
DOI:10.1016/j.nanoen.2020.105453
摘要
MXene Ti3C2, as the emerging member of two-dimensional (2D) materials family, has been applied to memristor and exhibited fast pulse modulation time and miniaturization size. However, the current abrupt behavior of switching processes hampered its further applications as a neuro-bionic device. Here, we present a facile method to improve the electronic performance of 2D MXene Ti3C2-based memristor by Ag nanoparticle doping. Compared to the pure Ti3C2 device, the Ag nanoparticle doping method exhibits a bidirectional continuous current transition behavior. Then, the variation trend of excitatory postsynaptic current (EPSC) was analysis in detail, and the transition rule of short-term potentiation (STP) to long-term potentiation (LTP) was systematically summarized. More interestingly, the energy consumption of generate one spike in unit device is as low as 0.35pj. And the memristor has ability to implement decimal arithmetic operations such as addition and multiplication. Exploration of the microstructure and finite element analysis (FEA) shows that the atomic vacancies capture the metal ions to form the filaments. This work provides a facile method to improve the electronic neuromorphic performance of MXene Ti3C2 memristor, which will considerably promote the diversification development of 2D materials in the field of neuro-morphology chips and greatly enhance the practicability of 2D materials.
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