材料科学
铁电性
光伏
数码产品
热电效应
热电材料
光电探测器
纳米结构
带隙
光电子学
纳米技术
化学
电介质
光伏系统
电气工程
物理
复合材料
物理化学
工程类
热力学
热导率
作者
Junye Li,Handong Li,Xiaobin Niu,Zhiming Wang
出处
期刊:ACS Nano
[American Chemical Society]
日期:2021-12-06
卷期号:15 (12): 18683-18707
被引量:60
标识
DOI:10.1021/acsnano.1c03836
摘要
Nanostructured In2Se3 compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) In2Se3 has caused a new upsurge of scientific interest in nanostructured In2Se3 and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of In2Se3 are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the In2Se3 compound family. Recent achievements in the preparation of low-D In2Se3 with controlled phases are discussed in detail. General principles for obtaining pure-phased In2Se3 nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured In2Se3 with different phases are also summarized. Progress and challenges on the applications of In2Se3 nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In2Se3 materials are presented.
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