A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation

We present a new, pulsed-gate stress test approach to determine electrical parameter stability of SiC MOSFETs over a lifetime. We demonstrate that the results of our test procedure reflect most realistically worst-case, end-of-life parameter drifts that occur in typical SiC MOSFET switching applications.