高电子迁移率晶体管
材料科学
极化(电化学)
铁电性
光电子学
晶体管
电压
凝聚态物理
电气工程
物理
电介质
化学
物理化学
工程类
作者
Yaopeng Zhao,Chong Wang,Xuefeng Zheng,Xiaohua Ma,Ang Li,Kai Li,Yunlong He,Xiaoli Lü,Yue Hao
出处
期刊:Chinese Physics B
[IOP Publishing]
日期:2021-05-01
卷期号:30 (5): 057302-057302
被引量:2
标识
DOI:10.1088/1674-1056/abd469
摘要
PbZr 0.2 Ti 0.8 O 3 (PZT) gate insulator with the thickness of 30 nm is grown by pulsed laser deposition (PLD) in AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs). The ferroelectric effect of PZT AlGaN/GaN MIS-HEMT is demonstrated. The polarization charge in PZT varies with different gate voltages. The equivalent polarization charge model (EPCM) is proposed for calculating the polarization charge and the concentration of two-dimensional electron gas (2DEG). The threshold voltage ( V th ) and output current density ( I DS ) can also be obtained by the EPCM. The theoretical values are in good agreement with the experimental results and the model can provide a guide for the design of the PZT MIS-HEMT. The polarization charges of PZT can be modulated by different gate-voltage stresses and the V th has a regulation range of 4.0 V. The polarization charge changes after the stress of gate voltage for several seconds. When the gate voltage is stable or changes at high frequency, the output characteristics and the current collapse of the device remain stable.
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