Electrical friction modulation on MoS2 using electron beam radiation without electrostatic interactions

Nanoscale friction under different electronic states and the corresponding friction controlling methods are both scientifically interesting and technologically important. However, friction measurements under electrical modulation are severely hampered by electrostatic forces induced by the charge-trapping effect. Therefore, in this study, we developed a new modulation method free from the charge-trapping effect through electron beam radiation; this method successfully modulated the friction between few-layer MoS2 and the silicon tip on atomic force microscopy. Friction on monolayer MoS2 increased under electron beam radiation. Strong correlations between the accelerating voltage, beam current, and friction force were found, and constant adhesion force demonstrate that the influence of static electricity was eliminated in this method. Excited electron states caused by electron injection could be possible mechanisms for friction modulation. However, the electron beam radiation had a negligible influence on the friction of bilayer MoS2. This study is the first of its kind, revealing the effect of electron beam radiation and electronic states on friction, which is important for the development of tribological theories and nanoelectromechanical systems, and offers a new electrical modulation method for friction tuning.