材料科学
微观结构
陶瓷
高分辨率透射电子显微镜
氧化钇稳定氧化锆
热导率
碳化硅
等轴晶
热压
复合材料
透射电子显微镜
碳化物
矿物学
电导率
冶金
纳米技术
立方氧化锆
化学
物理化学
作者
Young‐Wook Kim,Kwon Taek Lim,Won‐Seon Seo
摘要
A fully dense SiC ceramic with high thermal conductivity was obtained by conventional hot pressing, with 1 vol% Y 2 O 3 – Sc 2 O 3 additives. The ceramic had a bimodal microstructure consisting of large and small equiaxed SiC grains. Observation with high‐resolution transmission electron microscopy ( HRTEM ) showed two kinds of homophase ( SiC / SiC ) boundaries, that is crystallized and clean boundaries, and a fully crystallized junction phase. The thermal conductivity of the SiC ceramic was 234 W (m·K) −1 at room temperature. The high thermal conductivity was attributed to a clean SiC lattice and good contiguity between SiC grains.
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