Advances of the development of a ferroelectric field-effect transistor on Ge(001)

Here we report the recent advances towards the ferroelectric field-effect on Ge(001). We will demonstrate carrier density modulation in the underlying Ge(001) substrate by switching the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO ₃ on Ge. Recent results of patterning BaTiO ₃ for device applications and electrical properties of Pt/BTO/Ge heterostructures will be addressed.