Ultracompact ESD Protection With BIMOS-Merged Dual Back-to-Back SCR in Hybrid Bulk 28-nm FD-SOI Advanced CMOS Technology

The main purpose of this paper is to introduce an ultracompact device for electrostatic discharge (ESD) protection based on a bipolar metal oxide silicon (BIMOS) transistor merged with a dual back-to-back silicon-controlled rectifier (SCR) for bulk and for ultrathin body box fully depleted (FD)-silicon on insulator (SOI) advanced CMOS technologies in the hybrid bulk thanks to process co-integration. It is well known that ESD protection is a challenge for IC in advanced CMOS technology. In this paper, an optimized solution is described through the concept, design, 3-D technology computer aided design (TCAD) simulation, and silicon characterization in 28-nm FD-SOI in hybrid bulk. Measurements are done thanks to transmission line pulsed (TLP), very fast TLP and dc behavior. Moreover, the overvoltage is investigated through very fast transient characterization system measurements. It demonstrates a promising candidate to protect against ESD event and to develop new ESD network dedicated to system on chip.