磁阻随机存取存储器
对偶(语法数字)
随机存取存储器
材料科学
计算机科学
光电子学
计算机硬件
艺术
文学类
作者
M. Y. Song,Kuo-Lung Chen,Kaini Chen,K. T. Chang,I. J. Wang,Yu-Chen Hsin,Chih‐Yang Lin,Elia Ambrosi,Win-San Khwa,Yu Lu,Che‐Yuan Hu,Shao‐Yu Yang,S. H. Li,Jeng Hua Wei,T. Y. Lee,Y. J. Wang,Meng‐Fan Chang,Chi‐Feng Pai,X. Y. Bao
标识
DOI:10.1109/iedm45741.2023.10413832
摘要
The rapid development of artificial intelligence in recent decades has been continuously driving new software and hardware advancements. High-dimensional matrix-vector multiplication (MVM) is a crucial component in signal processing and machine learning computations. To achieve MVM, the 2D crossbar array of memristors has been widely discussed and studied. In this work, a novel SOT-MRAM device structure with 10ns write speed and >100x scalable resistance and read current are demonstrated to address the persistent problems of the traditional 2D crossbar array, leveraging its read-write path separation nature.
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