Tailoring the performance of GaN-based yellow light-emitting diodes

Efficient yellow InGaN light-emitting diodes (LEDs) have been a challenge for the researchers. To achieve yellow emission, high indium composition is necessary. However, high indium composition comes with its own challenges. In our work, the performance of InGaN yellow light emitting diodes is improved by using quaternary (AlInGaN) quantum barriers and ternary (AlGaN) quantum barriers in the conventional InGaN/GaN LED. We show that employing AlGaN quantum barriers in the light-emitting diodes significantly increases the concentration of electrons as well as holes, resulting in a 47% increase in radiative recombination rate than the conventional yellow LED. Additionally, the efficiency droop is significantly reduced in our proposed LEDs.