Abstract High‐performance 0D–2D hybrid photodetectors integrated with a crosslinker for direct pattering of quantum dots on the large‐scale synthesized MoS 2 layer are reported. In the patterned hybrid structure, QD layers are patterned with a resolution of up to 2 µm, ensuring high precision. Enhanced charge transfer from QDs to 2D materials is confirmed using PL quenching, TR‐PL, and UPS analysis. As a result, the QD/2D hybrid photodetectors with crosslinker‐assisted direct patterning demonstrated a remarkable photoresponsivity of ≈10 5 A W −1 and a specific detectivity of over 10 11 Jones, attributed to the difference in built‐in potential. The crosslinker patterning of QDs opens up potential applications for the photodetectors in highly integrated image sensors and can be further extended to high‐resolution display industries, eliminating unnecessary fabrication processes.