A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes

材料科学 α粒子 肖特基势垒 辐照 光电子学 阿尔法(金融) 二极管 粒子(生态学) 原子物理学 核物理学 医学 结构效度 海洋学 物理 护理部 患者满意度 地质学
作者
Mustafa A. M. Ahmed,F.D. Auret,J.M. Nel,A. Venter
出处
期刊:Journal of Materials Science: Materials in Electronics [Springer Science+Business Media]
卷期号:35 (27)
标识
DOI:10.1007/s10854-024-13507-2
摘要

Abstract 4H-SiC Schottky barrier diodes (SBDs) were exposed to 5.4 MeV alpha particles with fluences of 2.55× 10 11 cm −2 , 5.11 × 10 11 cm −2 and 7.67 × 10 11 cm −2 , respectively. Transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) was used to determine the structure and cross-sectional elemental composition of the device, while current–voltage and capacitance–voltage profiling were used to determine the primary electrical device-characteristics before and after irradiation. EDS revealed the presence of a <1 μm Ti layer, covered by 5 μm Al layer, in intimate contact with the SiC. Deep level transient spectroscopy (DLTS), performed in the temperature range 15–310 K, revealed one dominant peak around 50 K (E c - 0.07 eV) in the unirradiated samples. This peak showed asymmetry suggesting that it may consist of more than one defect. Notably, Z 1/2 , the carbon vacancy-related (V c ) defect commonly observed in as-grown n -type 4H-SiC, was not detected in the unirradiated reference sample. After irradiation, a broad peak emerged around 280 K (at 80 Hz), most likely Z 1/2, having a shoulder around 180 K, was detected. Increasing the fluence resulted in a corresponding decrease in the concentration of the electron trap observed around 50 K (E c - 0.07 eV), while the concentration increases for the defect detected around 280 K. Notably, the concentration of Z 1/2 was found to be strongly fluence dependent and linked to what we believe is a related to a silicon vacancy transition, labelled S 1/2 in literature. Laplace DLTS confirmed that the peak observed around 50 K is composed of multiple defects.
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