A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes

Abstract 4H-SiC Schottky barrier diodes (SBDs) were exposed to 5.4 MeV alpha particles with fluences of 2.55× 10 11 cm −2 , 5.11 × 10 11 cm −2 and 7.67 × 10 11 cm −2 , respectively. Transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) was used to determine the structure and cross-sectional elemental composition of the device, while current–voltage and capacitance–voltage profiling were used to determine the primary electrical device-characteristics before and after irradiation. EDS revealed the presence of a <1 μm Ti layer, covered by 5 μm Al layer, in intimate contact with the SiC. Deep level transient spectroscopy (DLTS), performed in the temperature range 15–310 K, revealed one dominant peak around 50 K (E c - 0.07 eV) in the unirradiated samples. This peak showed asymmetry suggesting that it may consist of more than one defect. Notably, Z 1/2 , the carbon vacancy-related (V c ) defect commonly observed in as-grown n -type 4H-SiC, was not detected in the unirradiated reference sample. After irradiation, a broad peak emerged around 280 K (at 80 Hz), most likely Z 1/2, having a shoulder around 180 K, was detected. Increasing the fluence resulted in a corresponding decrease in the concentration of the electron trap observed around 50 K (E c - 0.07 eV), while the concentration increases for the defect detected around 280 K. Notably, the concentration of Z 1/2 was found to be strongly fluence dependent and linked to what we believe is a related to a silicon vacancy transition, labelled S 1/2 in literature. Laplace DLTS confirmed that the peak observed around 50 K is composed of multiple defects.