掺杂剂
钙钛矿(结构)
材料科学
半导体
有机半导体
卤化物
光电子学
纳米技术
能量转换
兴奋剂
工程物理
化学工程
无机化学
化学
有机化学
物理
热力学
作者
Azimul Haque,Diego Rosas Villalva,Luis Huerta Hernandez,Roba Tounesi,Soyeong Jang,Derya Baran
标识
DOI:10.1021/acs.chemmater.1c01867
摘要
Doping serves as a vital strategy for tuning electronic and optoelectronic properties of semiconductors. Compared to organic semiconductors, the understanding and optimization of the doping process in halide perovskite semiconductors is still in its infancy. Nonetheless, there is a continuous surge in doping these semiconductors for performance enhancement. This perspective discusses the central role of dopants in organic and halide perovskite-based semiconductors used for energy conversion devices, particularly solar cells and thermoelectrics. We summarize various p- and n-type dopants explored for modifying the active layer in organic and perovskite devices, highlighting their challenges and limitations. Understanding doping-induced changes in electronic properties and their ramifications on device performance is essential for improving the device performance.
科研通智能强力驱动
Strongly Powered by AbleSci AI