退火(玻璃)
材料科学
扫描电子显微镜
纳米复合材料
透射电子显微镜
氩
化学工程
傅里叶变换红外光谱
钯
分析化学(期刊)
薄膜
电阻率和电导率
纳米技术
复合材料
化学
有机化学
工程类
催化作用
电气工程
作者
A. Kamińska,Mirosław Kozłowski,A. Piotrowska,E. Czerwosz
出处
期刊:Journal of physics
[IOP Publishing]
日期:2014-11-28
卷期号:564: 012002-012002
标识
DOI:10.1088/1742-6596/564/1/012002
摘要
C-Pd films were obtained by Physical Vapor Deposition (PVD) or by annealing of these initial PVD films at 650°C in different time (5, 10 and 30 minutes) in argon flow. These C-Pd films were characterized by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and FTIR spectroscopy. The sensing properties of the films were studied in a specially prepared chamber allowing for measurements of the changes in resistivity as a function of gas composition changes. It was found that annealing changes the films morphology, topography and structure, and consequently their sensing properties.
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