Influence of radio-frequency magnetron sputtering power on electrical characteristics and positive bias stress stability of indium tin zinc oxide thin-film transistors

Abstract As the pursuit of high-quality display panels intensifies, the importance of high-performance thin-film transistors (TFTs) becomes increasingly prominent. Indium tin zinc oxide (ITZO) TFTs, as one of the promising directions for high-performance metal oxide TFTs, impose high demands on their performance and reliability. In this study, the performance and stability of ITZO TFTs fabricated under different radio-frequency magnetron sputtering power conditions were systematically tested and investigated. After sputtering power optimization, the field effect mobility of ITZO TFTs reaches 29.68 cm²/V·s, with a steep sub-threshold swing of 0.17 V/decade, near-zero threshold voltage, and good stability. Using atomic force microscopy and X-ray photoelectron spectroscopy characterization techniques, the thin films were analyzed to elucidate the relationship between sputtering power variations and oxygen vacancies.